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| STM8601 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) VDSS 60V PRODUCT SUMMARY (P-Channel) VDSS -60V ID 4.5A RDS(ON) (m) Max 58 @ VGS=10V ID -3.3A RDS(ON) (m) Max 105 @ VGS=-10V 150 @ VGS=-4.5V 75 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a N-Channel 60 20 TA=25C TA=70C 4.5 3.6 16 15 TA=25C TA=70C 2.0 1.28 P-Channel -60 20 -3.3 -2.6 12 20 Units V V A A A mJ W W C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 C/W Details are subject to change without notice. Nov,06,2008 1 www.samhop.com.tw STM8601 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V 60 1 100 V uA nA VGS= 20V , VDS=0V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=4.5A VGS=4.5V , ID=4A VDS=5V , ID=4.5A 1 1.9 48 55 12 3 58 75 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS COSS CRSS Output Capacitance 852 VDS=30V,VGS=0V f=1.0MHz 72 45 pF pF pF Reverse Transfer Capacitance c SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=30V ID=1A VGS=10V RGEN=3.3 ohm VDS=30V,ID=4.5A,VGS=10V VDS=30V,ID=4.5A,VGS=4.5V VDS=30V,ID=4.5A, VGS=10V 12 11 37.5 8 14 6.7 1.75 2.9 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b 2 0.8 1.2 A V VGS=0V,IS=2A Nov,06,2008 2 www.samhop.com.tw STM8601 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current -60 -1 100 uA nA VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=-250uA VGS=-10V , ID=-3.3A VGS=-4.5V , ID=-2.8A VDS=-5V , ID=-3.3A -1.0 -1.8 85 110 7 -3.0 105 150 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-30V,VGS=0V f=1.0MHz 730 68 43 pF pF pF ns ns ns ns nC nC nC nC VDD=-30V ID=-1A VGS=-10V RGEN=3.3 ohm VDS=-30V,ID=-3.3A,VGS=-10V VDS=-30V,ID=-3.3A,VGS=-4.5V VDS=-30V,ID=-3.3A, VGS=-30V 12.4 10.5 65 23 14 6.7 1.5 3.3 DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b -2 -0.81 -1.2 A V VGS=0V,IS=-2A Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,VDD=20V,VGS=10V.(See Figure13) Nov,06,2008 3 www.samhop.com.tw STM8601 Ver 1.0 N-Channel 30 V G S = 10V 15 ID, Drain Current(A) V G S = 4V ID, Drain Current(A) 24 V G S = 4.5V 12 18 V G S =3.5V 9 12 V G S = 3V 6 125 C 3 25 C 0 -55 C 6 0 0 0.5 1.0 1.5 2.0 V G S = 2.5V 2.5 3.0 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 90 75 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 0 25 50 75 100 125 150 T j ( C ) V G S =4.5V ID=4A V G S =10V ID= 4.5A RDS(on)(m ) 60 45 30 15 0 0 6 VGS =4.5V VGS =10V 12 18 24 30 RDS(on), On-Resistance Normalized ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.4 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 V DS =V G S ID=250uA 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Nov,06,2008 www.samhop.com.tw STM8601 Ver 1.0 120 100 125 C 20.0 Is, Source-drain current(A) ID=4.5A 10.0 RDS(on)(m ) 80 75 C 60 25 C 5 125 C 25 C 40 20 0 75 C 0 2 4 6 8 10 1.0 0 0.3 0.6 0.9 1.2 1.5 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) C is s 800 600 400 200 0 0 C rs s 5 10 15 20 25 30 8 6 4 2 0 0 VDS = 30V ID=4.5A Cos s 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 100 50 it 10 10 ID, Drain Current(A) Switching Time(ns) TD(off ) RD S ( ) ON L im TD(on) 1 10 DC 10 1m 0u s s 0m ms 10 Tr s Tf VDS=30V,ID=1A VGS=10V 0.1 VGS=10V Single Pulse TA=25 C 1 10 60 300 1 1 10 100 0.02 0.1 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,06,2008 5 www.samhop.com.tw STM8601 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Nov,06,2008 6 www.samhop.com.tw STM8601 Ver 1.0 P-Channel 10 V G S = -10V V G S = -4.5V V G S = -3.5V 15 -ID, Drain Current(A) -ID, Drain Current(A) 8 12 6 V G S = -4V 9 4 2 V G S = -3V 6 25 C 3 125 C -55 C 2.7 3.6 4.5 5.2 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.9 1.8 -VDS, Drain-to-Source Voltage(V) -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 240 200 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0 V G S =-4.5V ID= -2.8A V G S =-10V ID =-3.3A RDS(on)(m ) 160 120 80 40 1 VG S =-4.5V VGS =-10V 1 2 4 6 8 10 RDS(on), On-Resistance Normalized 0 25 50 75 100 125 150 T j ( C ) -ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 V DS =V G S ID=-250uA 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,06,2008 7 www.samhop.com.tw STM8601 Ver 1.0 300 250 20 -Is, Source-drain current(A) ID=-3.3A 10 125 C 25 C RDS(on)(m ) 200 125 C 150 100 75 C 50 0 25 C 75 C 0 2 4 6 8 10 1 0 0.3 0.6 0.9 1.2 1.5 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -VGS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) 8 6 4 2 0 VDS = -30V ID=-3.3A 800 600 400 200 0 Cos s C rs s 0 5 C is s 10 15 20 25 30 0 2 4 6 8 10 12 14 16 -VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 100 50 -ID, Drain Current(A) TD(off ) 10 ( ) ON L im it 10 s 1 0 ms 0m s DC 1m Switching Time(ns) 10 0u s Tr Tf TD(on) R DS 1 10 VDS=30V,ID=1A VGS=10V 0.1 VGS=10V Single Pulse TA=25 C 1 10 60 300 1 1 6 10 60 100 0.02 0.1 Rg, Gate Resistance() -VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,06,2008 8 www.samhop.com.tw STM8601 Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Nov,06,2008 9 www.samhop.com.tw STM8601 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 Nov,06,2008 10 www.samhop.com.tw STM8601 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V Nov,06,2008 11 www.samhop.com.tw |
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